Topic: Computational Design of 2D Semiconductor Devices for Next-Generation Computing

Lecturer: Dr. Yee Sin Ang, Assistant Professor, Kwan Im Thong Hood Cho Temple Early Career Chair Professor

Time: April 23, 2026, 9:30, UTC+8

Venue: Physics Building 304, Nanhu Campus, Wuhan University of Technology

Biography: Dr. Yee Sin Ang is the Kwan Im Thong Hood Cho Temple Early Career Chair Professor & an Assistant Professor at the Singapore University of Technology and Design (SUTD). His research interests focus on the physics and the computational design of 2D semiconductors, interfaces and nanodevices for sustainable electronics, optoelectronics, photonics and novel device architectures such as spintronics, valleytronics and layertronics. Dr. Ang is a Lindau Nobel Laureate Meeting alumnus (2019). He is one of the Emerging Leaders of the Journal of Physics D: Applied Physics (Class of 2022). He is listed among the World’s Top 2% Scientists in the Applied Physics category by the Stanford University ranking in 2022 to 2025. He is the founding Associate Editor of APL Electronic Devices.

Abstract:The continued downscaling of CMOS technology faces fundamental physical bottlenecks, motivating the search for quantum materials and device concepts that harness novel quantum degrees of freedom for information processing. These opportunities are uniquely enabled by the exotic properties of quantum layered materials. In this work, we provide an overview of recent advances in the computational design of novel two-dimensional (2D) nanodevices. We introduce our recent efforts on the computational screening of sustainable 2D semiconductors for transistor and atomristor applications. We also discuss our work on altermagnets, an emerging class of unconventional antiferromagnetic materials with sizable momentum-space spin splitting, and their potential for memory devices. Beyond charge and spin degrees of freedom, valleytronics offers another avenue for information processing. Finally, we present the computational design of MoS2/Bi/MoS2, trilayer heterostructures for an all-electric layer-polarized current switch. Together, these studies highlight 2D quantum materials as a promising pathway toward multifunctional device architectures that may extend beyond the limits of CMOS for future computing technologies.

Rewritten by: Xu Hanyue

Edited by: Mei Mengqi, Li Tiantian

Source: School of Physics Mechanics, School of Materials Science and Engineering, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT Nano Key Lab